In regard to the technical problems of ordinary temperature sensors with the inadequacy of long response time to rapidly measure transient temperature and the difficulty to lead wires for thin film thermocouple, a thin film transient temperature sensor is developed with quick response time, high measurement accuracy and convenient to lead wires. The DC pulsed magnetron sputtering technology is applied to deposit NiSi functional thin film and SiO2 insulating thin film on the surface of ceramic substrate embedded with NiCrNiSi parallel electrode wires. The static performance of developed sensor is studied by utilizing a selfdeveloped static calibration system. Experimental results show that developed sensor has good linearity and thermal stability in the range of 50 to 400℃. The seebeck coefficient is 41.2 μV/℃ with a nonlinear error less than 0.05%, which remains stable with the change of NiSi film thickness. The dynamic performance of developed sensor is studied by using ANSYS finite element simulation and dynamic calibration experiments, which has a microsecond response time increased with the increasing of NiSi film thickness. In addition, the response time of developed sensor has little effect with the change of energy of laser pulse. The temperature test of thin film transient temperature is conducted through utilizing the temperature calibration furnace. The results show that the sensor can quickly respond to temperature changes and the developed sensor can provide effective methods and technical approaches for transient temperature test.