FeGa 膜 / AT 切石英晶片双面复合蝶形谐振磁场传感器
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TN384 TH73

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国家自然科学基金(62220106010)项目资助


Butterfly-shaped FeGa film / AT-cut quartz wafer double-sided composite resonant magnetic field sensor
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    摘要:

    蝶形磁致伸缩膜由于磁汇聚,其中心区域的磁致伸缩应变增强,但是和矩形 AT 切石英晶片复合时,磁膜耦合至矩形晶 片电极区的应变会向周围无磁膜区域扩散,降低应变对晶片厚度剪切振动的作用,降低磁场传感器灵敏度。 提出 AT 切石英晶 片和 FeGa 膜形状一样的蝶形谐振磁场传感器,蝶形晶片可以将蝶形磁膜增强的晶片应变汇聚至晶片电极区,以提高传感器灵 敏度。 仿真结果预测,在 23. 8~ 118. 9 Oe 的磁场范围内,蝶形结构的灵敏度为蝶形磁膜/ 矩形晶片结构的 3. 73 倍。 通过微机械 加工,制作了蝶形器件,对实际器件测试的结果表明,在 76. 4~ 117 Oe 的线性区间内,蝶形传感器的灵敏度可达-29. 08 Hz/ Oe。

    Abstract:

    Due to magnetic convergence, the magnetostrictive strain in the central region of a butterfly-shaped magnetostrictive film is enhanced. However, when the butterfly-shaped magnetostrictive films are combined with the rectangular AT-cut quartz wafer, the strain in the electrode region of the rectangular wafer spreads out to the surrounding non-magnetic film region and thus reduces the effect of the strain on the thickness-shear vibration of the wafer and consequently reduces the sensitivity of magnetic field sensor. In this paper, a butterfly-shaped resonant magnetic field sensor with the same shape of AT-cut quartz wafer as the FeGa films sandwiching the wafer is proposed. The butterfly-shaped sandwiched composite can concentrate the strain enhanced by the butterfly-shaped film into the electrode region of the wafer to improve the sensor sensitivity. The simulation results predict that the sensitivity of the butterfly-shaped structure is 3. 73 times that of the butterfly-shaped magnetic film/ rectangular wafer structure. By MEMS fabrication, we developed the butterflyshaped sensor, and the characterization of the actual device shows that the sensitivity can reach -29. 08 Hz/ Oe in the linear range of 76. 4~ 117 Oe .

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杨晓朋,文玉梅,陈冬雨,李 平. FeGa 膜 / AT 切石英晶片双面复合蝶形谐振磁场传感器[J].仪器仪表学报,2024,45(3):17-25

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  • 在线发布日期: 2024-05-31
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